Infineon Technologies OptiMOS™ MOSFETs 25V - 150V

Infineon introduces its first portfolio extension of the innovative Source Down technology concept. The new parts in PQFN 3.3 x 3.3 mm Source-Down dual-side cooling are extending the product range starting from 25 V up to 150 V.

The Source-Down technology impresses with a silicon die that is flipped upside down inside of the component, offering a number of advantages on device and system level. Instead of the drain potential being connected to the PCB over the thermal pad, the source potential is connected to it.

System level benefits include higher efficiency, less active cooling requirements and an effective layout for thermal management.

Key features

• R_DS(on) reduction up to 30% depending on the voltage class
• Optimized layout possibilities
• Superior thermal performance by dual-side cooling
• Two footprint versions available

Additional features

• Higher system efficiency
• System form factor reduction
• More relaxed thermal management
• Optimal device arrangement on the PCB

Applications

• Battery management
• Drives
• Telecom
• Server
• SMPS