Infineon Technologies MOTIX™ BTN9990LV

The BTN9990LV contains one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one package. Due to the p-channel high-side switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against over-temperature, undervoltage, overcurrent and short circuit.

Key features

• AEC-Q100/Q006 Qualified (Grade 1)
• Path resistance of typ. 5.3 mΩ @ 25° C (max. 9.6 mΩ @ 150° C)
• Supply voltage range 8 V - 18 V (max up to 40 V)
• Low quiescent current of max. 3.3 µA @ 85° C

Additional features

• One p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one small HSOF-7 package
• Overcurrent detection level of 75 A min
• Protection features: overcurrent, undervoltage, overtemperature
• 8 selectable switching slew rates for optimized EME

Benefits

• Integration of high power PMOS, NMOS and Driver IC minimizes design and manufacturing effort
• Less PCB area and BOM compared to discrete solution
• Higher system reliability due to integrated diagnosis, current sense and protection functions
• Supports half and full bridge (2x) configuration and cost optimization

Applications

• Automotive 12 V brushed DC Motor
• Seatbelt pretension
• Seat Control
• Fuel pumps
• Power lift gate
• Sliding door
• HVAC control module