Infineon Technologies EasyPACK™ 3B CoolSiC™

The DF4-19MR20W3M1HF_B11 is the first 2000 V CoolSiC™ MOSFET power module in an EasyPACK™ 3B housing. It enables a simpler solution, fewer number of components while increasing the power density and reducing the total system-cost for 1500 VDC applications.

The DF4-19MR20W3M1HF_B11 features a 4-leg boost configuration in one Easy 3B housing and comes with the latest CoolSiC™ M1H generation. The 2000 V SiC MOSFET shares the same performance and benefits as the 1200 V M1H series incl. 12% lower R_DS(on) at 125° C, wider gate source voltage area for higher flexibility, a max. junction temperature of T_vjop 175° C and smaller chip sizes.

Key features

• 2000 V CoolSiC™ MOSFET with enhanced generation 1
• Easy 3B housing
• Four channel boost configuration
• Enlarged recommended gate drive voltage window from +15…+18 V and 0…-5 V

Additional features

• Extended maximum gate - source voltages of +23 V and -10 V
• T_vjop under overload condition up to 175° C
• PressFIT pins
• Increasing power with half the part count
• The latest CoolSiC™ technology gives you full freedom in choosing the gate voltage during turn - off
• 10 x lower FT rate compared to 1700 V due to reduction of cosmic ray induced failure rate
• Reduction of drift caused by dynamic components

Applications

• Solar booster