Infineon Technologies CoolSiC™ MOSFET power modules

The EasyPACK™ and EasyDUAL™ power modules are the lead types with enhanced generation 1 CoolSiC™ MOSFET (M1H).

The modules feature a significantly larger gate operation window with recommended VGS(on) 15 – 18 V, V_GS(off) 0 - 5 V and extended maximum gate-source voltages of +23 V & -10 V to cover over- & undershoots.

The improvement on V_GS(th) stability significantly reduce the drift caused by the dynamic components and at the same time the R_DS(on) performance is improved by around 12% at 125° C. In addition, it is allowed to operate the device up to 175° C to cover overload conditions in the respective applications.

Key features

• Easy 1B, 2B and 3B housing
• 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
• Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
• Extended maximum gate-source voltages of +23 V and -10 V

Additional features

• T_vjop under overload condition up to 175° C
• Sixpack, 3-level or half-bridge configuration
• PressFIT pins
• Pre-applied Thermal Interface Material (Easy 3B)
• Broadest industrial Silicon Carbide portfolio on the market
• 12% R_DS(on) improvement compared to standard CoolSiC™ MOSFET (M1)
• Reduction of drift caused by dynamic components

Applications

• Servo drives
• UPS
• EV Charger
• Solar inverters