Infineon Technologies CoolSiC™ MOSFET 650V

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The CoolSiC™ MOSFET 650V in the compact SMD 7 pin package are built on a state-of-the-art Infineon SiC trench technology targeting high power applications. It is optimized to enable maximum system performance, compactness and reliability.

Key features

• Low Q_rr and Q_oss
• Low switching losses
• Commutation robust fast body diode
• Leading trench technology with superior gate oxide reliability

Additional features

• Increased avalanche capability
• SMD package for direct integration into PCB
• Sense pin for optimized switching performance
• High performance, high reliability and ease of use
• Enable high system efficiency and power density
• Reduces system cost and complexity
• Enable cheaper, simpler and smaller systems
• Works in topologies with continuous hard commutation
• Fit for high temperature and harsh operations

Applications

• Server
• Telecom
• SMPS
• Solar energy systems
• Energy storage and battery formation
• UPS
• EV charging
• Motor drives