Infineon Technologies CoolGaN™ transistors

Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. The high performance CoolGaN™ e-mode HEMTs are available in both top-coooled as well as bottom-cooled SMD packages. This enables highest efficiency and power density as well as optimal thermal behavior in the application. 

Key features

• Enhancement mode transistor – normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction

Additional features

• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI

Applications

• Industrial
• Telecom
• Datacenter SMPS based on the half-bridge topology