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New Product Introduction

NPI Body

Broadcom AFBR-S4N66P024M

2×1 NUV-MT Silicon Photomultiplier array

Silicon Photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons.

Key features

2×1 SiPM array
Array size 13.54 mm × 6.54 mm
High PDE of more than 65% at 420 nm
Excellent SPTR and CRT

Additional features

Excellent uniformity of breakdown voltage
Excellent uniformity of gain
Four-side tilable, with high fill factors
Cell pitch 40 × 40 µm²
Highly transparent epoxy protection layer
Operating temperature range from 0°C to +60°C RoHS, CFM, and REACH compliant

The Broadcom^® AFBR-S4N66P024M is a Silicon Photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons. Two 6 mm × 6 mm SiPMs are arranged in a 2×1 element array with a pitch of 7 mm. Larger areas can be covered with a SiPM-pitch of 7 mm by tiling multiple AFBR-S4N66P024M arrays. The passivation layer is a clear epoxy mold compound (EMC) highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity toward blue and the near-UV region of the light spectrum. The array is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials — LSO, LYSO, BGO, NaI, CsI, BaF and LaBr as examples. This product is lead free and RoHS compliant.

A 4×4 NUV-MT Silicon Photo Multiplier Array is also available with part number AFBR-S4N44P164M.