WeEn SiC diodes

Silicon Carbide is a widely used semiconductor material for medium to high voltage power components. This is due to its inherent properties of wide bandgap and high thermal conductivity. WeEn SiC Power Diodes have a current range from 2 to 40 A, voltages of 650 and 1200 V, and are available in a variety of industry-standard, SMD, and through-hole power packages. Both single and double SiC diodes are available. SiC diodes feature extremely fast and temperature-independent switching, enabling a higher power density and excellent efficiency in fast switching applications such as Vienna Rectifiers, PFC Boost Converters, or Full-Bridge Inverters.

Key features

• Highly stable switching performance
• Extremely fast reverse recovery time
• Reduced EMI
• Superior in efficiency to Silicon Diode alternatives

Additional features

• Highly stable switching performance
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant

Applications

• Power factor correction
• Telecom/Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED/OLED TV
• Motor drives