WeEn IGBT
High speed IGBT with anti-parallel diode in TO-247 package
WeEn is introducing a comprehensive range of Insulated Gate Bipolar Transistors (IGBTs), made in trench gate field-stop technology. The first member, WG50N65DHW, is a high-speed 650 V, 50 A IGBT in the TO-247 package. It features low switching losses and a soft recovery anti-parallel diode. Target applications include PFC, welding converter, solar inverter, and UPS.
Key features
- Trench Gate Field-Stop technology
- Optimized VCE and EOFF trade-off to reduce IGBT power losses
- Smooth switching behavior avoids voltage overshoot and reduces system EMI
- Fast and soft recovery anti-parallel diode
Additional features
- Trench Gate Field-Stop technology
- Thin wafer
- Low VCE(SAT) and low switching losses
- Optimized VCE and EOFF trade-off to reduce IGBT power losses
- Fast and soft recovery anti-parallel diode
- Smooth switching behavior avoids voltage overshoot and reduces system EMI
- Positive VCE(SAT) temperature coefficient
- Maximum junction temperature Tj(max) = 150 °C
- Low thermal resistance
- Halogen-free package, Pb-free lead finish
- RoHS compliant
- Qualified according to JEDEC
- Meets UL94V0 Flammability requirement
Applications
- UPS
- Power Factor Correction (PFC)
- Welding converters
- Solar Inverters
- Industrial Inverters
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