Toshiba Electronics Europe TPH2R408QM / TPN19008QM
U-MOS X-H 80V series N-channel power MOSFETs
TPH2R408QM and TPN19008QM are based upon Toshiba's latest generation U-MOSX-H process that exhibits a reduction of around 40% in drain-source ON-resistance (RDS(ON)) compared to corresponding 80 V products in earlier processes. These devices can significantly enhance power supply efficiency.
Key features
- Lowest Rds(ON) in compact form factor
- Excellent FOM: Rds(ON) x Q(oss) and Rds(ON) x Q(sw)
- TPH2R408QM in 5 x 6 mm SOP Advance for improved compatibility, and TPN19008QM in 3 x 3 mm
- Junction temperature (Tj): 175 °C max.
Additional features
- Low conduction loss
- High-efficiency switching
- More thermal headroom
Additional Benefits
- Lower heat generation
- Smaller space consumption, helping to reduce costs
Applications
- Telecom Power Supply (PSU)
- PSU synchronous rectification 24 to 28 V output voltage
- Motor drive power stage for 36 V power tool
- Industrial power supply
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