New Product Introduction

Toshiba Electronics Europe TPH2R408QM / TPN19008QM

U-MOS X-H 80V series N-channel power MOSFETs

Toshiba Electronics Europe TPH2R408QM TPN19008QM product image

TPH2R408QM and TPN19008QM are based upon Toshiba's latest generation U-MOSX-H process that exhibits a reduction of around 40% in drain-source ON-resistance (RDS(ON)) compared to corresponding 80 V products in earlier processes. These devices can significantly enhance power supply efficiency.

 

Key features

  • Lowest Rds(ON) in compact form factor
  • Excellent FOM: Rds(ON) x Q(oss) and Rds(ON) x Q(sw)
  • TPH2R408QM in 5 x 6 mm SOP Advance for improved compatibility, and TPN19008QM in 3 x 3 mm
  • Junction temperature (Tj): 175 °C max.

 

Additional features

  • Low conduction loss
  • High-efficiency switching
  • More thermal headroom  

Additional Benefits

  • Lower heat generation
  • Smaller space consumption, helping to reduce costs

 

Applications

  • Telecom Power Supply (PSU)
  • PSU synchronous rectification 24 to 28 V output voltage
  • Motor drive power stage for 36 V power tool
  • Industrial power supply

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