STMicroelectronics STDRIVEG600

The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.

The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.

The STDRIVEG600 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

Key features

• Up to 20 V gate driver​
• 5.5 A / 6 A sink/source currents​ @ 15 V
• 45 ns short propagation delay​
• Integrated Bootstrap diode​ allow to reduce BOM count​

Additional features

• dV/dt immunity ±200 V/ns
• Driver current capability:
  • 1.3/2.4 A source/sink typ @ 25 °C, 6 V
  • 5.5/6 A source/sink typ @ 25 °C, 15 V
• Separated turn on and turn off gate driver pins
• 45 ns propagation delay with tight matching
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Interlocking function
• UVLO on low-side and high-side sections
• Dedicated pin for shut down functionality
• Over temperature protection

Applications

• High-voltage PFC, DC-DC and DC-AC converters
• Switch-mode power supplies
• UPS systems
• Solar power
• Motor driver for home appliance
• and factory automation and Ind. drives.

Available Tools

• EVSTDRIVEG600DG: Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with enhanced mode GaN HEMTs
• EVSTDRIVEG600DM: Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with MDmesh DM2 Power MOSFET