onsemi NXH010P120MNF1

The NXH010P120MNF1 is a power module containing a 1200 V, 10 mΩ EliteSiC MOSFET half-bridge and a thermistor in an F1 package. Recommended gate voltage for driving the MOSFETs is 18 V to 20 V. The package is equipped with Press-Fit Pins, offers low thermal resistance, and is available in options With pre-applied Thermal Interface Material (TIM) and without pre-applied TIM.

Key features

• SiC power module, 2-PACK half-bridge topology in F1 package
• 1200 V, 10 mΩ EliteSiC MOSFET
• Recommended gate voltage: 18 to 20 V
• Improved efficiency or higher power density

Additional features

• Integrated 1200 V, 10 mΩ EliteSiC MOSFET half-bridge solution
  • Integrated thermistor
• Recommended gate voltage: from 18 V to 20 V
• Improved R_DS(ON) at the higher voltages
• Low thermal resistance
• Improved efficiency or higher power density
• Press-Fit Pins
• Options available with and without pre-applied Thermal Interface Material (TIM)
• Flexible solution for high-reliability thermal interface
• Maximum current capability at T_J = 175 °C:
  • Continuous (I_D): 114 A
  • Pulsed (I_Dpulse): 342 A
• Module junction temperature range:
  • From -40 to 150 °C (recommended)
  • From -40 to 175 °C (max)

Applications

• Electric Vehicle (EV) charging
• Solar Inverter
• Energy storage systems
• Uninterruptible Power Supply (UPS)