onsemi Nx045N065SC1
EliteSiC MOSFET 650 V, 45 mΩ, D2PAK or TO247
EliteSiC Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology.
This enables higher current density, lower capacitance hence faster-switching frequency, and low ON-resistance at a device level. Benefits for systems employing EliteSiC devices are consequently reduced losses, higher temperature operation, and optimized system size & weight performance.
Key features
- Rated to 650 V
- Typical RDS(ON) of 45 mΩ
- D2PAK and TO247 packages
- Industrial and automotive-grade versions
Additional features
- Superior switching and thermal characteristics over conventional traditional Silicon technology
- D2PAK 7-lead package
- TO247 4-lead package
- High junction temperature(TJ): 175 °C
- 100% UIL Tested
- Pb-Free and RoHS Compliant
- AEC Qualified and PPAP Capable NV-suffix versions available
Applications
- DC/DC converter
- PFC boost inverter
- Power supply
- PV photovoltaic Inverters and charging
- Uninterruptible power supply (UPS)
- DC/DC converters for EV/PHEV
- Automotive on-board charger
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