onsemi NTx015N065SC1
EliteSiC MOSFET 650 V, 15 mΩ, D2PAK or TO247
EliteSiC Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency, and low ON-resistance at a device level. Benefits for systems employing EliteSiC devices are consequently reduced losses, higher temperature operation, and optimized system size & weight performance.
Key features
- Rated to 650 V
- Typical RDS(ON) of 15 mΩ
- D2PAK and TO247 Packages
- Industrial and Automotive Grade versions
Additional features
- Superior characteristics over conventional traditional Silicon technology
- D2PAK 7-lead package
- TO247 4-lead package
- High Junction Temperature Tj = 175C
- 100% UIL Tested
- Pb-Free and RoHS Compliant
- AEC Qualified and PPAP Capable NV-suffix versions available
Applications
- DC/DC Converter
- PFC Boost Inverter
- Power Supply
- PV Photovoltaic Inverter and Charging
- Uninterruptible power supply UPS
- Automotive: DC/DC converter for EV/PHEV
- Automotive On Board Charger
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