NXP Semiconductors TEA2209T

The TEA2209T is a product of a new generation of active bridge rectifier controllers replacing the traditional diode bridge.

Using the TEA2209T with low-ohmic high-voltage external MOSFETs significantly improves the efficiency of the power converter as the typical rectifier diode-forward conduction losses are eliminated. Efficiency can improve up to about 1.4% at 90 V (AC) mains voltage.

The TEA2209T is designed in a silicon-on insulator (SOI) process.

Key features

• Integrated high-voltage level shifters
• Very low external part count
• Integrated X-capacitor discharge (2 mA)
• Forward conduction losses of the diode rectifier bridge are reduced

Additional features

• Integrated high-voltage level shifters
• Directly drives all four rectifier MOSFETs
• Very low external part count
• Integrated X-capacitor discharge (2 mA)
• Self-supplying
• Full-wave drive improving total harmonic distortion (THD)
• S016 package 

Control features

• Disable function for all external power FETs
• Undervoltage lockout (UVLO) for high-side and low-side drivers
• Drain-source overvoltage protection for all external power MOSFETs
• Gate pull-down currents at start-up for all external power MOSFETs

Efficiency features

• Forward conduction losses of the diode rectifier bridge are eliminated
• Very low IC power consumption (2 mW)

Applications

• Adapters
• Power supplies for desktop PC and all-in-one PC
• Power supplies for television
• Power supplies for servers

Available Tools

TEA2209DB1584:

• Active bridge rectifier controller demo board
• This demo board contains a TEA2209T and four low-ohmic high-voltage MOSFETs