Infineon Technologies IHV B single switch
IHV B single switch power modules 3.3 kV With IGBT4
The well-known IHV B 3.3 kV single switch IGBT module has been improved to meet current and future requirements for industry applications such as drives, traction and transmission. It now features the TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode.
The FZ2400R33HE4 offers 45% better performance in the same housing, compared to 1800 A competitor device. FZ825R33HE4D has an increased diode, which offers the same performance as the 1000 A Infineon and competition devices. FZ1600R33HE4 is 30% smaller at 10% higher performance vs. 1500 A competition devices.
Customers can easily switch from the IGBT3 to the IGBT4.
Key features
- Standardized IHV B housing 190 mm (FZ2400) or 130 mm (FZ825 and FZ1600)
- Best in class short circuit capability
- Latest 3.3 kV IGBT4 chip generation in 8” wafer technology
- Optimized substrate layout and chip area
Additional features
- Power cycling improved by factor 2 compared to the competition and IGBT3 devices
- Package with CTI > 600
- Best in class short circuit capability: 3.3 kV
Additional benefits
- Unbeatable robustness against overload and fault condition
- Highest power & thermal cycling capability
- Enables frame size jumps
- Low effort for upgrading the old design to the newest technology
- Reduced system-cost
- Higher performance at given inverter size
Applications
- Drives
- Traction
- Transmission
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