Infineon Technologies IHV B single switch
IHV B single switch power module 4.5 kV with IGBT4
The well-known market-leading IHV 4.5 kV IGBT3 modules have now been upgraded to the latest front- and backend technologies and design possibilities. The FZ1800R45HL4(_S7) features the latest 4.5 kV chip generation in 8-inch wafer technology and is the perfect fit for transmission & distribution, as well as industrial drives. Both modules can realize 50% higher output power at the same size, which in turn translates to cost reduction for the system designer. Over 100 k pieces of FZ1200R45HL3(_S7) are the reliable workhorses enabling a stable green grid, now the new FZ1800R45HL4(_S7) will follow this heritage with even lower losses.
Key features
- Latest 4.5 kV chip generation in 8-inch wafer technology
- Trench/Fieldstop IGBT4, emitter-controlled 4 diode
- High TC and PC capability and cosmic radiation stability
- S7 feature offers -18% VCE(SAT)
Additional features
- Low power losses with high output RMS currents
- Extended application dependent RBSO and SOA specifications
- >10% lower losses than competition devices, further decrease with _S7 type
- Unbeatable robustness against overload and fault conditions
- Up to 50% reduced system cost
- Standardized housing eases design and maintenance
Applications
- Transmission & distribution
- Motor control and drives
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