Infineon Technologies IGBT7 discretes 1200V

Infineon 1200 V TRENCHSTOP™ IGBT7 S7 portfolio with its co-packed full rated, very soft diode offers reduced V_CE(sat), and improved controllability delivering/providing the best thermal performance among SC devices and increased robustness thanks to HV-H3TRB and cosmic ray ruggedness. The 1200 V IGBT7 S7 discrete portfolio, released in 6 current classes - 8A, 15A, 25A, 40A and 50A, specifically designed hard switching application, such as industrial motor drives, industrial power supplies and solar inverters requiring short circuit capability.

Key features

• IGBT co-packed with full current, soft, and lo Q_rr diode
• Low saturation voltage V_CE(sat) = 2.0 V at T_vj = 175°C
• Optimized for hard switching topologies (2 level inverter, 3L NPC T type)
• Short circuit ruggedness 8µsec

Additional features

• Portfolio of 8 A, 15 A, 25 A, 40 A and 50 A devices
• Wide range of dv/dt controllability
• HV-H3TRB and improved cosmic ray ruggedness
• Higher pulse current 3xIcnom capability
• Easy for paralleling
• Higher power density
• 1200 V blocking voltage
• TO247 3pin package
• Optimized performance in application conditions
• Low conduction losses
• Low switching losses
• Improved reliability
• Easy EMI design

Applications

• Industrial drivers
• Industrial power supplies
• Solar inverters