Infineon Technologies IGBT R6 650V - IHW65R6

Reverse Conducting R6 IGBT 650 V portfolio with its monolithically integrated diode offer the lowest Vcesat, lowest power losses, and improved diode performances bringing the perfect trade-off between power losses and EMI behavior for all soft switching applications using a half-bridge topology

The R6 IGBT  family is specifically designed for induction heating application, in order to meet the specific requirements in terms of efficiency (lowest possible losses in soft-switching conditions), higher output power (optimal thermal behavior), reliability (standard Infineon quality level), and capacity (new 12” production line)

Key features

• Improved IGBT performance to offer best trade-off between power losses and EMI performance
• Improved diode performance reducing Vf and dependency of gate voltage
• Diode forward recovery peak and time comparable to co-packed device
• Portfolio of 30 A, 40 A, and 50 A devices

Additional features

• Tj(max) = 175 °C
• 650 V blocking voltage
• TO247-3 package

 Additional Benefits

• High compatibility with existing gate driver solutions
• Optimized performance in application conditions
• Low conduction losses
• Low switching losses
• Improved EMI performance

Applications

• Induction cooking
• Microwave ovens