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New Product Introduction

NPI Body

Infineon Technologies EiceDRIVER™

Fast level-shift 650 V gate driver

Infineon broadens its EiceDRIVER™ portfolio with the new Fast Level Shift family of 0.7 A, 650 V, half-bridge, and HS + LS SOI gate drivers in DSO-8 package and 2.5 A HS + LS driver in DSO-16W package.

Fast 90 ns propagation delay and tight 10 ns (max) matching enable higher frequency switching to expand applications to LLC / LCC resonant ZVS topologies used in many different power conversion applications such as SMPS, UPS, eV Wall Chargers, Battery Chargers, LED lighting Luminaires to name a few.

Key features

Operating voltages (VS node) up to + 650 V
Negative VS transient immunity of 100 V with 300 ns repetitive pulses
Integrated ultra-fast, low resistance bootstrap diode
90 ns propagation delay; 10 ns (max) matching

Additional features

Supports switching frequencies up to 500 kHz
Shutdown input turns off both channels (2ED2110S06M)
Separate logic and power ground, shorten the gate loop (2ED2110S06M)
Independent undervoltage lockout (UVLO) for both channels
Maximum supply voltage of 25 V
Logic operational up to -11 V on VS Pin
Negative voltage tolerance on inputs of -5 V

Additional Benefits

Integrated bootstrap diode (BSD) - space-saving, reduced BOM cost, smaller PCB at lower cost with a simpler design
50% lower level-shift losses with Infineon SOI technology for higher switching frequencies for SMPS and UPS applications
Higher switching frequencies enable reduction of cost and size for resonant components used in LLC and LCC ZVS topologies by eliminating high side pulse transformers.
Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
No parasitic device structures present in the device, hence no parasitic latch-up at all temperature and voltage conditions
High current family - suitable for a high current power device, and high-frequency application