Infineon Technologies CoolGaN™ 600 V eval board
CoolGaN™ 600V e-Mode HEMT half-bridge evaluation board
EVAL_1EDF_G1B_HB_GAN is a 600 V gallium nitride (GaN) half-bridge evaluation board that enables easy and rapid setup and test of CoolGaN™ transistors. The generic topology can be configured for boost or buck operation, pulse testing, or continuous full-power operation. Test points provide easy access to connect signals to an oscilloscope to measure the switching performance of CoolGaN™ transistors and gate drivers. This board saves the user from designing their own gate driver and power circuit to evaluate GaN transistors.
The half-bridge circuit board features a single PWM input intended for the connection of a 50 Ω pulse generator.
Key features
- Simple GaN half-bridge with dedicated GaN driver ICs
- Capable of multi-MHz switching frequencies
- Zero reverse-recovery: can shift between hard- or soft-switching
- GaN transistors feature top-side cooling for high power dissipation
Additional features
- Easy setup and use
- Multiple configurations possible
- Evaluate high-frequency capabilities of GaN
- Evaluate waveforms with low ringing, overshoot, EMI
- Enables easy evaluation at multi-kilowatt power levels
Applications
- Power Supply
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