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Infineon Technologies CoolGaN™ 600 V eval board

CoolGaN™ 600V e-Mode HEMT half-bridge evaluation board

Infineon Technologies XENSIV TLE4999C8 product image

EVAL_1EDF_G1B_HB_GAN is a 600 V gallium nitride (GaN) half-bridge evaluation board that enables easy and rapid setup and test of CoolGaN™ transistors. The generic topology can be configured for boost or buck operation, pulse testing, or continuous full-power operation. Test points provide easy access to connect signals to an oscilloscope to measure the switching performance of CoolGaN™ transistors and gate drivers. This board saves the user from designing their own gate driver and power circuit to evaluate GaN transistors.

The half-bridge circuit board features a single PWM input intended for the connection of a 50 Ω pulse generator.

 

Key features

  • Simple GaN half-bridge with dedicated GaN driver ICs
  • Capable of multi-MHz switching frequencies
  • Zero reverse-recovery: can shift between hard- or soft-switching
  • GaN transistors feature top-side cooling for high power dissipation

 

Additional features

  • Easy setup and use
  • Multiple configurations possible
  • Evaluate high-frequency capabilities of GaN
  • Evaluate waveforms with low ringing, overshoot, EMI
  • Enables easy evaluation at multi-kilowatt power levels

 

Applications

  • Power Supply

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Related parts

  • EVAL1EDFG1BHBGANTOBO1


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