Infineon Technologies 650 V CoolMOS™ CFD7
The latest 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high-power topologies
The latest 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high-power topologies. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS).
The ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations. It comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge as well as additional 50 V breakdown voltage.
Key features
- Ultrafast body diode & very low Qrr
- 650V breakdown voltage
- Best-in-class RDS(on) / package combinations
- Lowest RDS(on) dependency over temperature
Additional features
- Significantly reduced switching losses
- Excellent hard-commutation ruggedness
- Extra safety margin for designs with increased bus voltage
- Enabling increased power density
- Outstanding light-load efficiency in industrial SMPS applications
- Improved full-load efficiency in industrial SMPS applications
- Price competitiveness compared to alternative offerings in the market
Applications
- Fast EV charging
- Server power supply
- Solutions for solar energy systems
- Telecom infrastructure
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