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Infineon Technologies 6500 V, 225 A dual IGBT module

XHP™ 3 6.5 kV half-bridge module FF225R65T3E3

Infineon Technologies XENSIV TLE4999C8 product image

XHP™3 is a 6500 V, 225 A, dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode. XHP™ stands for flexible high power platform and it is characterized by its internal symmetry and low stray inductance. It can easily be paralleled for a modular approach and thus a scalable inverter design.

The latest add-on to the XHP™ 3 family is the FF225R65T3E3 - the first half-bridge module with 6.5 kV for traction applications.

 

Key features

  • Standardized XHP™ 3 housing
  • 6.5 kV
  • 10.4 kV isolation
  • CTI 600

 

Additional features

  • Fire and smoke classification according to EN45545 R22, R23, R24, HL2
  • AlSiC baseplate and AlN substrate
  • Ultrasonically welded terminals
  • Low stray inductance and symmetric internal current sharing
  • Modular concept

Additional benefits

  • Excellent scalability by paralleling of XHP™ modules
  • Accelerated design-in process due to simplified mechanical design
  • Clean switching 

 

Applications

  • Traction

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Order samples at Farnell

 

Related parts

  • FF225R65T3E3BPSA1


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