Infineon Technologies OptiMOS™ 6 power 40 V MOSFET

With this best-in-class OptiMOS™ 6 power MOSFET 40 V normal level, Infineon offers a benchmark solution for normal level (higher threshold voltage) required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher V_th for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.

In addition, lower Q_GD/Q_GS ratios (C_GD/C_GS divider ratio) reduce the gate voltage spikes' peak, further contributing to the robustness against unwanted turn-on. The ISC007N04NM6 features a very low R_DS(ON) of 0.7 mΩ.

Key features

• N-channel enhancement mode MOSFET
• Normal level gate threshold (2.3 V typical)
• 175 °C junction temperature (Tj)
• Low gate charge

Additional features

• Optimized charge ratio Q_GD/Q_GS 
  • Less than 0.8 for dV/dt immunity
• 100% avalanche tested
• High current rating 

Additional Benefits

• Normal gate drive offers immunity to false turn-on in noisy environments
• Increased operating temperature for robust designs
• Reduced switching losses leading to greater system efficiency and power density
• Suitable for FOC (field-oriented control) and DTC (direct torque control) motor control techniques
• Increased current carrying capability

Applications

• Battery-powered applications
• Battery management
• Low voltage drives