Infineon Technologies OptiMOS™ power MOSFETs 40 V
OptiMOS™ power MOSFETs 40 V in PQFN 3.3 x 3.3 source-down
The new IQE013N04LM6 and IQE013N04LM6CGATMA1 OptiMOS™ 40 V in PQFN 3.3 x 3.3 mm Source-Down are the first extensions of Infineon's innovative Source-Down portfolio. These MOSFETs offer superior thermal performance and optimized layout possibilities to support higher system efficiency and a significant increase in power density.
Key features
- Significant reduction in RDS(ON) up to 25%
- Superior thermal performance in RthJC
- Optimized layout possibilities
- Standard and Center-Gate footprint
Additional features
- High current capability
- More efficient use of PCB area
- Highest power density and performance
- Optimized footprint for MOSFET parallelization with Center-Gate
Applications
- SMPS
- Telecom and Server
- Power Tools
- Charger
- Battery Protection
Additional Info
Infineon's OptiMOS™ low-voltage power MOSFETs present an innovative and improved PQFN package concept with Source-Down technology. With this new package, the silicon is flipped upside down inside of the component. This leads to the source potential connected to the PCB over the thermal pad instead of the drain potential.
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