WeEn in TO-247-2L diodes

These four Fast Recovery Diodes (FRD) come in the True 2-pin TO-247 package. This package features the longest creepage distance between the pins and also gives a minimal chance of short-circuiting and sparking between the pins. Both Ultrafast and Hyperfast diodes are available in this package.

The Silicon, Bipolar (PN), diodes are made in the SABER, Platinum Doped, technology. This technology gives low leakage current at high temperatures, high inrush current, fast switching, and soft recovery for low EMI. The parts are qualified to 175 °C.

Key features

• Platinum doped technology (SABER) for low leakage current at high temperatures
• Fast switching and soft reverse recovery characteristics
• Reduces switching losses in associated MOSFET or IGBT
• Low reverse recovery current

Additional features

• Platinum Doped technology (SABER) for low leakage current at high temperatures, no risk of thermal runaway
• Soft reverse recovery characteristics, low EMI
• Low reverse recovery current
• Low forward voltage drop
• Low leakage current
• Reduces switching losses in associated MOSFET or IGBT
• Maximum junction temperature T_j (max): 175 °C
• RoHS compliant

Applications

• UPS
• EV charger
• Welding machine
• SMPS Power Factor Correction (PFC)
• Active PFC in air conditioner
• Half-bridge/full-bridge switched-mode power supplies