Vishay SiSS94DN Siliconix MOSFET

Vishay introduces the SiSS94DN, 200 V N-channel MOSFET that offers industry-leading low typical R_DS(ON) of 61 mΩ and FOM of 854 mΩ x nC to increase power density, and save energy and space. This new 200 V N-channel TrenchFET^® Gen IV power MOSFET is available in 3.3 by 3.3 mm thermally enhanced PowerPAK 1212-8S package. With its compact size, the SiSS94DN allows designers to save PCB space by replacing a much larger MOSFET with the same conduction losses, or a similar-sized MOSFET with higher conduction losses.

Key features

• Reduced conduction and switching losses to save energy
• Offered in the 3.3 x 3.3 mm thermally enhanced PowerPAK 1212-8S package
• SiSS94DN is 65% smaller than devices with similar ON-resistance in 6 x 5 mm packages
• 100% RG- and UIS-tested

Additional features

• Purpose-built to increase power density::
  • The space-saving SiSS94DN is 65% smaller than devices with similar ON-resistance in 6 x 5 mm packages
• 20% lower typical ON-resistance than the next best product on the market in a similar package size
• 17% lower FOM than the previous-generation solution
• The SiSS94DN allows saving PCB space by replacing a much larger MOSFET with the same conduction losses, or a similar-sized MOSFET with higher conduction losses

Applications

• Primary side switching
• Synchronous rectification
• DC/DC topologies
• Lighting
• Load switch
• Boost converter
• Motor drive contro