Vishay SISS52DN Siliconix MOSFET N-Channel 30 V

Vishay Intertechnology has introduced the SISS52DN, a 30V N-channel Trench FET Gen V power MOSFET that provides industry-leading low ON-resistance. The new MOSFET was developed to offer a higher power density in a smaller space. The new device is smaller than the devices with similar ON-resistance, in a 6 by 5 mm package. The compact form factor of the device allows it to fit easier into designs with a limited PCB space.

Key features

• Very low R_DS(ON) x Qg figure-of-merit (FOM)
• Enables high power density with very low RDS(ON) and thermally enhanced compact package
• 100 % Rg and UIS tested
• TrenchFET® Gen V power MOSFET

Additional features

• Maximum drain-source voltage: 30 V
• R_DS(ON) max. at V_GS = 10 V: 0.0012 Ω
• R_DS(ON) max. at V_GS = 4.5 V: 0.0019 Ω
• Gate charge (Qg): 19.9 nC (typ.)
• Maximum drain current (I_D max.): 162 A
• Configuration:
  • Single transistor

Applications

• DC/DC converter
• POL
• Synchronous rectification
• Battery management
• Power and load switch

Available tools

• Calculator and Parametric Search
  • https://www.vishay.com/ppg?79977&designtools-ppg