Vishay SISF04DN common drain Dual N-Channel 30 V (S1-S2) MOSFET

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting capability. The Integrated MOSFETs feature N-channel, and N + P-channel options, as well as a breakdown voltage range of 20 V to 200 V. The Enhancement Mode MOSFETs have 6 or 8 pins, a power dissipation range of 1.5 W to 69.4 W, and R_DS(ON) in the range from 2.15 mΩ to 26 mΩ.

Key features

• Very low ON resistance
• Integrated common-drain N-channel MOSFETs in a compact and thermally enhanced package
• Optimizes circuit layout for bi-directional current flow
• 100 % Rg and UIS tested

Additional features

• Operating Temperature: -55...+150 °C
• Mounting: SMT
• Channels: 1, 2, or 3
• Transistor Type: N channel, N + P channel
• Drain-Source breakdown voltage (V_DS): 20 V...200 V
• Gate-Source voltage (V_GS): -16 V...20 V
• Drain-Source resistance (R_DS(ON)): 2.15mΩ to 26mΩ
• Continuous Drain current (I_D): 8.5 A...60 A
• Fall Time: 510 ns...12 μs
• Rise Time: 330 ns...3.5 μs
• Power Dissipation: 1.5 W...69.4 W
• Enhancement mode MOSFETs
• AEC-Q101 qualified

Applications

• Battery protection switch
• Bi-directional switch
• Load switch

Available tools

• Parametric Search and Calculator:
  • https://www.vishay.com/ppg?77230&designtools-ppg