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New Product Introduction

NPI Body

Toshiba 2nd Gen 650 V SiC diode TO-247

TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB

Toshiba's new 650 V Schottky Barrier Diode (SBD) products are using SiC (Silicon Carbide), a new material allowing higher efficiency of power supply PFCs (Power Factor Corrections). The new products are Toshiba’s second-generation SiC SBDs with the improved JBS (Junction Barrier controlled Schottky) structure. They feature high surge current capability and low-loss characteristics. These features allow higher efficiency and larger margins in the thermal design of equipment.

Toshiba will expand its lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.

Key features

Low leakage current and low V_F
Low thermal runaway of I_R
Factor 1.5 x higher surge current I_FSM vs. previous generation
Lower switching loss due to thinner wafer

Additional features

High non-repetitive peak forward surge current ratings
- I_FSM (Per leg) / (Both legs) = 52 A / 104 A (TRS12N65FB)
- I_FSM (Per leg) / (Both legs) = 65 A / 130 A (TRS16N65FB)
- I_FSM (Per leg) / (Both legs) = 79 A / 158 A (TRS20N65FB)
- I_FSM (Per leg) / (Both legs) = 92 A / 184 A (TRS24N65FB)
Low forward voltage
- V_F (Per leg) = 1.45 V (typ.) at I_F = 6 A (TRS12N65FB)
- V_F (Per leg) = 1.45 V (typ.) at I_F = 8 A (TRS16N65FB)
- V_F (Per leg) = 1.45 V (typ.) at I_F = 10 A (TRS20N65FB)
- V_F (Per leg) = 1.45 V (typ.) at I_F = 12 A (TRS24N65FB)
Higher efficiency PFC operation
Increased thermal margin
High operation frequency allow small filter
Additional Benefits
- Improved system performance & lower system costs
- Reduced form factor & cooling requirements