Toshiba 2nd Gen 650 V SiC diode TO-247

Toshiba's new 650 V Schottky Barrier Diode (SBD) products are using SiC (Silicon Carbide), a new material allowing higher efficiency of power supply PFCs (Power Factor Corrections). The new products are Toshiba’s second-generation SiC SBDs with the improved JBS (Junction Barrier controlled Schottky) structure. They feature high surge current capability and low-loss characteristics. These features allow higher efficiency and larger margins in the thermal design of equipment.

Toshiba will expand its lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.

Key features

• Low leakage current and low V_F
• Low thermal runaway of I_R
• Factor 1.5 x higher surge current I_FSM vs. previous generation
• Lower switching loss due to thinner wafer

Additional features

• High non-repetitive peak forward surge current ratings
  • I_FSM (Per leg) / (Both legs) = 52 A / 104 A (TRS12N65FB)
  • I_FSM (Per leg) / (Both legs) = 65 A / 130 A (TRS16N65FB)
  • I_FSM (Per leg) / (Both legs) = 79 A / 158 A (TRS20N65FB)
  • I_FSM (Per leg) / (Both legs) = 92 A / 184 A (TRS24N65FB)
• Low forward voltage
  • V_F (Per leg) = 1.45 V (typ.) at I_F = 6 A (TRS12N65FB)
  • V_F (Per leg) = 1.45 V (typ.) at I_F = 8 A (TRS16N65FB)
  • V_F (Per leg) = 1.45 V (typ.) at I_F = 10 A (TRS20N65FB)
  • V_F (Per leg) = 1.45 V (typ.) at I_F = 12 A (TRS24N65FB)
• Higher efficiency PFC operation
• Increased thermal margin
• High operation frequency allow small filter
• Additional Benefits
  • Improved system performance & lower system costs
  • Reduced form factor & cooling requirements

Applications

• Power supplies for industrial equipment
• base stations, PC servers, etc
• Power supplies for consumer equipment
• organic EL-TVs, audio amplifiers, projectors, etc
• power supplying facilities for electric vehicles