Nexperia GaN FETs for Industrial Applications

Efficient power use is a key industrial challenge and a driver for innovation. Societal pressure and legislation are demanding increasing efficiencies in power conversion and control. For some applications power conversion efficiency and power density are critical for market adoption. Prime examples include high-voltage communications and industrial infrastructure sectors. GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost.

Key features

• High Efficiency (up to 99% efficiency)
• High Switching Frequency (up to 1 MHz)
• Simple gate driving (0 to 12 V standard gate drive)
• Transient over-voltage capability

Additional features

• High power conversion efficiency
  • Low and linear E_OSS
  • Very low source-drain voltage in reverse conduction mode
  • Low Q_rr
• Up to 1 MHz in soft-switching applications
  • High power density
• Robust gate oxide:
  • ±20 V capability
• Easy to design gate drive
  • 0 to 12 V standard gate drive voltage
• High gate threshold voltage: +4 V
  • Allows for very good gate bounce immunity
• Low body diode forward voltage (V_F)
  • Allows for reduced losses and simplified dead-time adjustments
• Transient over-voltage capability for increased robustness

Applications

• Solar inverters (Single phase)
• UPS - Uninterrupted power supplies (Single-phase 2-10 kW)
• Servo Drives (Single-phase)
• Power Supply (Single-phase 2-10 kW)

Upcoming seminars

23rd March:
 - EBV FAE Training Session: Nexperia Power GaN

22nd April:
- Training Roadshow: Nexperia Power GaN

New product in CCPAK to be released soon:
- Datasheet: https://assets.nexperia.com/documents/data-sheet/GAN039-650NBBA.pdf
- Product page: https://www.nexperia.com/products/gan-fets/GAN039-650NBB.html
- Leaflet: https://assets.nexperia.com/documents/leaflet/nexperia_document_leaflet_GaN_CCPAK.pdf