Infineon Technologies CoolSiC™ MOSFETs 1200 V

Infineon presents CoolSiC™ MOSFET 1200 V class in a new D2PAK-7L package. A broad R_DS(ON) portfolio of 30 mΩ up to 350 mΩ enables top efficiency in a wide power range of industrial power supplies, chargers, as well as various Ampere ratings in servo drives. CoolSiC™ trench MOSFET technology is optimized to combine performance with reliability in operation, complemented by a 3 µs short-circuit withstand time. Thanks to .XT interconnection technology, the thermal capabilities in a small package form factor are significantly improved. 

Key features

• Very low switching losses
• Short-circuit withstand time, 3 µs
• Fully controllable dV/dt
• Benchmark gate threshold voltage, VGS(th) = 4.5 V

Additional features

• Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
• 1200 V optimized SMD package with creepage and clearance distances, > 6.1 mm on PCB
• Sense pin for optimized switching performance
• Efficiency improvement
• Enabling higher frequency
• Increased power density
• Cooling effort reduction
• Reduction of system complexity and cost
• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink

Applications

• Drives
• Industrial power supplies – Industrial UPS
• Infrastructure - Charger
• Solar string inverter and solar optimizer

Available tools

• Motor Drives Inverter Board with CoolSiC™ MOSFET in TO247 package
  • EVAL-M5-IMZ120R-SIC is a 3-phase inverter board for motor drive applications implemented with our CoolSiC™ MOSFETs. For operating it, a control board equipped with the M5 32-pin interface connector such as the XMC DriveCard 4400 is needed. Jointly they feature and demonstrate usage of Silicon Carbide MOSFETs in this application.
  • The evaluation board was developed to support customers during their first steps designing applications with the CoolSiC™ MOSFET 1200 V in discrete packages, such as the IMW120R045M1, and EiceDRIVER™ 1200 V isolated gate driver 1EDI20H12AH. The assembled discrete has a rated blocking voltage of 1200 V at a typical on-state resistance of 45 mOhm and the board supports all CoolSiC™ MOSFETs in 3pin and 4pin TO247 packages
  • Order code: EVALM5IMZ120RSICTOBO1

• CoolSiC™ MOSFET 1200 V in TO-247 3-/4-pin evaluation platform
  • The CoolSiC™ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO247 3-pin and 4-pin. To show these options, the design was split into this motherboard and currently, two drive cards. The modular approach was chosen to allow the platform to be expanded with new drive cards in the future. The first drive card (REF_PS_SIC_DP1) contains the EiceDRIVER™ 1EDC Compact 1EDC20I12MH with an integrated active Miller clamp preventing parasitic turn-on. The second drive card (REF_PS_SIC_DP2) includes the EiceDRIVER™ 1EDC Compact 1EDC60H12AH allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative. The motherboard was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A. More drive cards with different driver ICs and CoolSiC™ MOSFETs are planned.
  • Order code mainboard: EVALPSSICDPMAINTOBO1 
  • Order code driver card DP1:  REFPSSICDP1TOBO1
  • Order code driver card DP2: REFPSSICDP2TOBO1

• 62.5W auxiliary power supply for three-phase power converter
  • The reference board was developed to support customers designing auxiliary power supplies for three-phase converters using the 1700 V CoolSiC™ MOSFET in a single-ended flyback topology. The board has three outputs of +15 V, -15 V, and +24 V with up to 62.5 W output power working in a wide input voltage range from 200 VDC to 1000 VDC. The reference board works in quasi-resonant mode and has a peak efficiency of 90.56% at a full load specification.
  • Order code: REF62WFLY1700VSICTOBO1