Infineon Technologies CIPOS™ Maxi SiC IPM - IM828-XCC

High-performance CIPOS™ Maxi transfer molded silicon carbide IPM IM828-XCC integrates 6 CoolSiC™ MOSFETs with an optimized 1200 V 6-channel SOI gate driver to increase reliability, provide excellent protection, and optimize PCB size and system costs.

The smallest and most compact package in the 1200 V class, this IPM combines a power rating in excess of 8 kW with exceptional power density, reliability, and performance. It offers excellent protections such as under-voltage lockout on all channels, all switches turn off during protection, cross-conduction prevention, over-current protection, temperature monitoring.

Key features

• Fully isolated dual inline molded module with DCB
• 1200 V CoolSiC™ MOSFET
• Rugged 1200 V SOI gate driver technology
• Integrated bootstrap functionality

Additional features

• Overcurrent shutdown
• Undervoltage lockout on all channels
• Turnoff of all six switches during protection
• Cross-conduction prevention
• Allowable negative V_S potential up to -11 V for signal transmission at V_BS=15 V
• Low-side emitter pins accessible

Additional benefits

• Smallest package size in 1200 V IPM class with the high power density and excellent performance
• Gate driver technology with enhanced robustness for excellent protection
• High efficiency up to 99%
• Wide switching speed range up to 80 kHz
• Adapted to fast-switching applications with lower power losses
• Simplified design and manufacturing 

Applications

• 3-phase PFC
• Pumps
• Active filter (active power factor correction) for HVAC
• Low-power general purpose drives (GPI, servo drives)