Infineon Technologies 650 V Hybrid CoolSiC™ IGBT devices
New 650 V Hybrid CoolSiC™ IGBT device combines benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed Schottky
The new 650 V Hybrid CoolSiC™ IGBT device combines key benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed Schottky barrier CoolSiC™ diode. The use of a Schottky barrier diode as a freewheeling diode co-packed with IGBT allows to extend the capabilities of IGBT and enables a significant reduction in Eon and overall switching losses. Fast and easy upgrade of 650 V TRENCHSTOP™5 IGBT designs with Hybrid CoolSiC™ IGBT brings efficiency improvement of 0.1% for each 10 kHz switching frequency.
Key features
- Very low ON-state losses
- Benchmark switching IGBT in hard switching topologies
- Highest efficiency
- Reduced cooling effort
Additional features
- Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology
- Increased power density
- Plug & play replacement of the pure silicon devices
- Easy upgrade of existing designs for higher efficiency
- Excellent for paralleling
Applications
- Industrial UPS
- Industrial SMPS
- Solar String Inverter
- Energy Storage
- Charger
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