Vishay SiSS12DN 40 V MOSFET in PowerPAK® 1212-8S package

Vishay introduces the new 40 V TrenchFET® Gen IV N-channel power MOSFET. Best in class COSS times ON-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing zero-voltage-switching (ZVS) or switch-tank topology. SISS12DN utilizes 65 % less PCB space than similar solutions in 6 x 5 packages, enabling higher power density. Minimizing conduction and switching losses simultaneously to increase efficiency for several building blocks in power supplies.

Key features

• Maximum ON-Resistance Down to 1.98 mΩ at 10 V Minimizes Conduction Losses
• Low COSS of 680 pF and Gate Charge of 28.7 nC Reduce Power Losses from Switching
• Offered in Compact 3.3 mm by 3.3 mm PowerPAK 1212-8S Package
• 100 % RG- and UIS-tested, RoHS-Compliant, and Halogen-Free

Additional features

• Drain source voltage: 40 V
• RDS(ON) max. at:
• 10 V: 1.98 mΩ
• 4.5 V: 2.74 mΩ
• COSS typical: 680 pF
• Gate charge: 28.7 nC
• Output charge typical: 28 nC

• Synchronous rectification in AC/DC power supplies
• Primary- and secondary-side switching in DC/DC converters targeting telecom, server, and medical equipment
• Half-bridge power stage and buck-boost converters in voltage regulation for server and telecom equipment
• OR-ing functionality in telecom and server power supplies
• Power stage for switch capacitor or switch tank converters
• Motor drive control in power tools and industrial equipment
• Battery protection and charging in battery management modules

Applications

• Synchronous Rectification in AC/DC Power Supplies
• OR-ing Functionality in Telecom and Server Power Supplies
• Power Stage for Switch Capacitor or Switch Tank Converters
• Motor Drive Control in Power Tools and Industrial EG.
• Battery Protection and Charging in Battery Mgr. Module