Vishay SiSS05DN P-channel 30 V (D-S) MOSFET

Vishay introduced the new 30 V P-channel TrenchFET^® Gen IV power MOSFET that offers industry-leading low ON-resistance of 3.5 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, in addition to best in class on-resistance times gate charge - a critical figure of merit (FOM) for MOSFETs used in switching applications - of 172 mΩ x nC. Purpose-built to increase power density, the SiSS05DN is 65 % smaller than devices with similar on-resistance in 6 mm by 5 mm packages. The device's compact form factor is easier to fit into space-constrained designs. 

Key features

• Provides Exceptionally Low R_DS(ON) in a PowerPAK 1212-8S 3 x 3 mm² Package
• Enables Higher Power Density
• Smaller Dimensions Fit into Tight Design Space
• 100 % Rg and UIS tested

Additional features

• TrenchFET^® Gen IV p-channel power MOSFET
• Provides exceptionally low R_DS(ON) in a compact package that is thermally enhanced
• 65% reduction of PCB real estate for MOSFET
• Equal or lower R_DS(ON) of devices in 6 X 5 mm² package types
• Enables higher power density
• 100 % R_g and UIS tested

Applications

• Battery management in mobile devices
• Adapter and charger switch
• Circuit protection
• Load switch

Available tools

Calculator and parametric search

• http://www.vishay.com/docs/77029/siss05dn.pdf