Vishay SIR680ADP-T1-RE3 N-Channel 80 V (D-S) MOSFET

Vishay introduced a new 80 V TrenchFET® Gen IV N-channel power MOSFET. Designed to save energy by increasing the efficiency of power conversion topologies and switching circuitry, the SiR680ADP offers best in class ON-resistance times gate charge - a key figure of merit (FOM) for MOSFETs used in power conversion applications - of 129 mΩ x nC. The device combines ON-resistance down to 2.35 mΩ typical at 10 V with ultra low gate charge of 55 nC and COSS of 614 pF. The ON-resistance MOSFET is the most efficient solution available for typical 48 V input to 12 V output DC/DC converters. 

Key features

• Industry Leading RDS x Qg FOM
• Very Low Qg and Coss Enables Efficient Switching
• FOM of 129 mΩ x nC
• ON-resistance down to 2.35 mΩ

Additional features

• Enables Higher Power Density:
  • Double cooled feature provides dual avenues for thermal transfer and heat sinking
  • Near symmetrical thermal resistance between top pad and bottom pad
  • Potential drop-in upgrade for PowerPAK SO-8
• Very Low Qg and Coss Enables Efficient Switching:
  • High performance silicon for switching power supplies
  • Qg is 20% lower than similar products
  • Very low Coss of 614 pF reduces power loss from charging and discharging of capacitance
• Industry Leading RDS x Qg FOM:
  • Typical RDS x Qg FOM = 129 mΩ x nC
  • FOM is 10% lower than the next best product in the same package
  • Reduces power losses and improves efficiency

Applications

• Synchronous Rectification
• Primary Side Switch
• DC/DC Converters
• Power OR-ing
• Power Supplies
• Motor Drive Control
• Battery and Load Switch

Available tools

• Calculator Tool and Parametric Search:
  • http://www.vishay.com/ppg?77207&designtools-ppg