Vishay SiR626DP N-Channel 60 V (D-S) MOSFET

The new SiR626DP 60 V TrenchFET® MOSFET in PowerPAK SO-8 combines low RDS(ON) down to 1.7 mΩ with best-in-class gate charge of 52 nC and output charge of 68 nC, reducing power losses and increasing efficiency.

Key features

• TrenchFET® Gen IV Power MOSFET
• Very Low RDS - Qg Figure-of-Merit (FOM)
• Tuned for the Lowest RDS - Qoss FOM
• 100% Rg and UIS tested

Additional features

• Low Maximum On-Resistance Down to 1.7 mΩ At 10 V Reduces Conduction Losses
• Ultra-Low Gate Charge of 68 nC at VGS of 10 V and Output Charge Of 68 nC
• Low COSS of 992 pF
• Decreases Power Loss from Gate Driving, Charging, and Discharging Output Capacitance
• Improves Efficiency in Synchronous Rectification and Switching Applications
• Offered in the 6.15 mm x 5.15 mm Thermally Enhanced PowerPAK SO8 Package
• 100% RG and UIS-Tested
• RoHS-Compliant and Halogen-Free

Applications

• Synchronous Rectification
• Primary Side Switches
• DC/DC Converters
• Solar Micro-Inverters
• Motor Drive Switches
• Battery and Load Switches
• Industrial