Taiwan Semiconductor N-Channel power MOSFET 30

Taiwan Semiconductor N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designer benefit from a robust EAS Capability and a high power density package with MSL1 selection. Perfectly suitable for high temperature environment applications.

Key features​

• Low RDS(ON) to Minimize Conductive Losses
• Low Gate Charge for Fast Power Switching
• 100 % UIS and Rg Tested
• 175 °C Operating Junction Temperature

Additional features

Performance

• Robustness EAS Capability
• High Power Density Package with MSL1 Selection

Robust

• 175 °C Operating Junction Temperature
• High Thermal Design Margin
• Higher Surge Current Capability During Cold Load Start-up in a Rush
• Suited for High-temperature Environment Applications

Applications

• BLDC Motor Control
• Battery Power Management
• DC-DC Converters
• Secondary Synchronous Rectification