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Power Integrations SIC1182K single channel SiC MOSFET gate driver IC

The SIC1182K is a single channel gate driver with up to 8 A output current in an eSOP-R16B package for SiC MOSFETs

The SIC1182K is a single channel gate driver with up to 8 A output current in an eSOP-R16B package for SiC MOSFETs.
It comes along with a new feature, combining short-circuit protection (at and during turn-on phase) as well as overvoltage limitation by SiC advanced active clamping (at turn-off phase) through a single sensing pin.
In case driven semiconductor provides a current-sense terminal, an adjustable over-current detection can be realized.
Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology.

Key features

Overvoltage limitation (SiC Advanced Active Clamping)
Short-circuit current fault detection and turn-off in typically 2µs
±8 A peak gate output current
eSOP-R16B package with FluxLink™ technology provides reinforced isolation for up to 1200 V

Additional features

Ultrafast short-circuit monitoring
Over-current detection for SiC MOSFETs with current-sense terminal
UVLO primary and secondary side
Rail-to-rail stabilized output voltage
Unipolar supply voltage for secondary-side
Suitable for 600 V / 650 V / 1200 V SiC MOSFET switches
Up to 150 kHz switching frequency
Propagation delay jitter ±5 ns
-40 °C to +125 °C operating ambient temperature
High common-mode transient immunity
eSOP package with 9.5 mm creepage and clearance
Undervoltage lock-out protection for primary and secondary-side including fault feedback
100% production partial discharge test
100% production HIPOT compliance testing
Reinforced insulation pending VDE V 0884-10 certification
UL 1577 recognition pending
Halogen free and RoHS compliant