onsemi AFGHL50T65SQDC 650V, 50A fieldstop hybrid IGBT
Using novel field stop IGBT and EliteSiC SBD technology, new series of hybrid IGBTs from onsemi offer the optimum performance for hard switching application
Using novel field stop IGBT and EliteSiC SBD technology, new series of hybrid IGBTs from onsemi offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a EliteSiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely EliteSiC-based solutions.
Key features
- Optimum Performance for Hard Switching Application
- Co-Packaged Silicon-Based IGBT and EliteSiC Schottky Barrier Diode
- Automotive AEC Qualified, PPAP Capable
- Very Low Switching and Conduction Losses
Additional features
- Automotive AEC Qualified, PPAP Capable
- Very Low Switching and Conduction Losses
- Maximum Junction Temperature TJ=175 °C
- Positive Temperature Co-Efficient
- Co-packed With EliteSiC Schottky Barrier Diode
- Tight Parameter Distribution
Applications
- Automotive
- xEV On & Off Board Charger
- Industrial Inverter
- UPS
- Solar Inverter
- DC-DC Converter
- Hard Switching
Available tools
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