Infineon 650 V TRENCHSTOP™ 5 S5 IGBT thin-wafer technology

650 V TRENCHSTOP™ 5 is recognized leading IGBT thin-wafer technology. Now also available in small footprint packages like TO-220-3 enables higher power designs in a compact size. Apart from high current density in small package low losses of the TRENCHSTOP™ 5 benefits to low junction temperature of the device, consequently less cooling, longer operational cycles and high life time expectancy.

Key features

• 4 times Ic pulse current (100°C Tc)
• Soft current fall characteristics with no tail current
• Symmetrical, low voltage overshoot
• Maximum junction temperature Tvj = 175°C

Additional features:

• Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
• Gate voltage under control (no oscillation). No risk of unwanted turn -on of device and no need for gate clamping
• Qualified according to JEDEC standards
• Benefits
• Easy plug and play with silicon diodes
• System efficiency improvement over Si diodes
• Enabling higher frequency / increased power density solutions
• System reliability improvement

Applications

• Corded power tools
• Motor control and drives