Infineon 1200 V CoolSiC™ Schottky diode G5 in TO247-2 package

1200 V CoolSiC™ Schottky diodes G5 now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

Key features

• No reverse recovery current, no forward recovery voltage
• Temperature-independent switching behavior
• Low forward voltage even at high operating temperature
• Tight forward voltage distribution
   

Additional features

• High surge current capability 
• Real two-pin package with 8.7 mm creepage and clearance distances
• Easy plug and play with silicon diodes 
• System efficiency improvement over Si diodes 
• Enabling higher frequency / increased power density solutions
• System reliability improvement

Applications

• EV-Charging
• Welding
• CAV
• Solutions for solar energy systems
• Motor and control drives
• UPS
• Industrial SMPS