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Vishay SiZ240DT PowerPAIR® Dual N-Channel MOSFETs

Vishay introduces a new 40 V N-channel MOSFET half-bridge power stage that delivers increased power density and efficiency for white goods, industrial, medical, and telecom applications

Vishay introduces a new 40 V N-channel MOSFET half-bridge power stage that delivers increased power density and efficiency for white goods, industrial, medical, and telecom applications. Integrating high side and low side MOSFETs in one compact PowerPAIR^® 3.3 by 3.3 mm package, the Vishay Siliconix SiZ240DT provides best-in-class ON-resistance, as well as the ON-resistance x gate charge - a key figure of merit (FOM) for MOSFETs used in power conversion applications.

Key features

TrenchFET® Gen IV power MOSFETs
Integrated MOSFET half-bridge power stage
100% Rg and UIS tested
Optimized Qgs/Qgs ratio improves switching

Additional features

High side and low side TrenchFET^® MOSFETs in Compact PowerPAIR^® 3x3S package
Internally connected in a half-bridge configuration
Saves space over discrete solutions, reduces component counts, simplifying designs
Low ON-resistance:
- 8.05 mΩ at 10 V for the Channel 1 MOSFET
- 8.41 mΩ at 10 V for the Channel 2 MOSFET
Low gate charge:
- 6.9 nC for the Channel 1 MOSFET
- 6.5 nC for the Channel 2 MOSFET
Wire-free internal construction minimizes parasitic inductance
Enables high-frequency switching and thus reduces the size of magnetics and final designs
Optimized Qgd / Qgs ratio reduces noise to further enhance the device’s switching characteristics
100% Rg- and UIS-tested
RoHS-compliant, and halogen-free