Vishay SISS32LDN N-channel 80 V (D-S) MOSFET
Next-Generation 80 V TrenchFET® Portfolio with low RDS(ON)
Next-Generation 80 V TrenchFET® Portfolio with low RDS(ON), Qg, and COSS for reducing all the elements of power loss. 56% COSS reduction from the previous generation and minimized switching related power loss in synchronous rectification.
Key features
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- Low RDS(ON), Qg and COSS reduce all elements of power loss
- 100% Rg and UIS tested
Additional features
- TrenchFET® Gen IV power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100 % Rg and UIS tested
Applications
- Synchronous Rectification
- Primary-Side Switch
- DC/DC Converters
- Motor-Drive Switches
- Battery and Load Switches
- Industrial
Available tools
Parametric Search and calculator:
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