Vishay SiSF20DN common drain dual N-Channel 60 V (S1-S2) MOSFET

Vishay Intertechnology introduces a new common-drain dual N-channel 60 V MOSFET in the compact, thermally enhanced PowerPAK 1212-8SCD package. Designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies, the Vishay Siliconix SiSF20DN offers the best in class RS-S(ON) and the industry’s lowest RS-S(ON) per area.

Key features

• Source-to-Source Resistance - RS-S(ON) - Down to 10 mΩ at 10 V (Typ.)
• Industry’s Lowest RS-S(ON) Per Area
• 60 V Rating for 24 V Systems and Industrial Applications
• 88% Lower RS-S(ON) than Conventional Dual Devices in Similar Package

Additional features

• Best in class RS-S(ON)
• Lowest among 60 V devices in the 3 mm by 3 mm footprint
• Represents a 42.5 % improvement over the next best solution in this footprint size
• 89 % lower than Vishay's previous-generation devices
• RS-S(ON) per area is 50 % lower than the next best alternative MOSFET in the 6 by 5 mm package
• The SiSF20DN uses an optimized package construction with two monolithically integrated TrenchFET® Gen IV N-channel MOSFETs in a common drain configuration to save PCB space, reduce component counts, and simplify designs.
• Source contacts are placed side by side, with enlarged connections increasing the contact area with the PCB, and reducing resistivity further compared to conventional dual package types
• This design makes the MOSFET ideal for bidirectional switching in 24 V systems and industrial applications

Applications

• Battery Protection Switch
• Bi-Directional Switch
• Load Switch
• 24 V Systems
• Power Conversion

Available tools

Calculator and Parametric Search:

http://www.vishay.com/ppg?76915&designtools-ppg