Vishay SiRA99DP first-ever -30 V P-Channel MOSFET

Vishay Intertechnology introduces the new SiRA99DP -30 V P-channel MOSFET with the lowest RDS(ON) and RDS x Qg FOM in its class. When using N-channel MOSFETs at the high-side, a charge pump is mandatory. Using the Vishay SiRA99DP compared to N-channel devices eliminates the need for a drive circuit and charge pump so it reduces component count and simplifies designs. The SiR99DP, therefore, achieves high efficiency with fewer components and enables higher power density.

Key features

• Very Low RDS(ON) Minimizes Voltage Drop and Reduces Conduction Losses
• Eliminates The Need for Charge Pump
• Features Best-in-Class RDS x Qg FOM
• Very Low Qgd with Short Miller Plateau

Additional features

• Best-in-class RDS(ON)
• Typical RDS(ON) = 1.3 mΩ
• Maximum RDS(ON) = 1.7 mΩ
• Minimizes I2R voltage drop across power path
• Reduces conduction losses
• Achieves high efficiency with fewer components, simplifying designs
• Enables higher power density

Applications

• Adapter and Charger Switch
• Battery and Circuit Protection
• OR-ing
• Load Switch
• Motor Drive Control