Vishay SiR870BDP N-channel 100 V (D-S) MOSFET | EBV Elektronik
N-Channel 100 V (D-S) MOSFET
Next-Generation 100V TrenchFET® Portfolio with low RDS(ON), Qg and COSS to reduce all elements of power loss for the more efficient primary-side switching.
Key features
- N-Channel 100-V (D-S) MOSFET PowerPAK SO-8
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100% Rg and UIS tested
Additional features
- TrenchFET® Gen IV power MOSFET
- Very low ON-resistance RDS(ON):
- RDS(on) max. at VGS = 10 V: 0.0061Ω
- RDS(on) max. at VGS = 4.5 V: 0.0077Ω
- Tuned for the lowest RDS(ON) x Qoss FOM
Applications
- Synchronous Rectification
- Primary Side Switch
- DC/DC Converters
- Power Supplies
- Motor Drive Control
- Battery and Load Switches
Available tools
Parametric Search and calculator:
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