Vishay SIR608DP N-channel 45 V (D-S) MOSFET

Vishay's 45 V TrenchFET® Gen IV products reach a sweet spot between performance FOMs and safety margin. Their 45 V breakdown voltage means a 12.5% greater safety margin than 40 V rated MOSFETs with similar ON-resistance characteristics. The typical R_DS(on) is as low as 1 mΩ in the 6 by 5 mm footprint and reduces power loss during channel conduction, while their RDS(ON) x Qoss FOM is 65 % lower than the lowest R_DS(ON) 60 V device used in these applications

Key features

• Low Qg and Qoss for switching
• Reduce power loss from gate driving, charging and discharging of Coss
• Achieves higher overall efficiency
• Typical RDS(on) is 1 mΩ in 6 x 5 mm footprint

Additional features

• TrenchFET® Gen IV power MOSFET
• 45 V Drain-source break-down voltage
• Tuned for low Qg and Qoss
• 100 % Rg and UIS tested

Applications

• Synchronous Rectification in Power Conversions
• DC/DC Converters
• Resonant Switching Converters
• Motor Drive Control
• Battery Management

Application Notes

Additional headroom without performance sacrifice represents a typical requirement for power supplies and motor drive controls in applications like power tools. These designs tend to have strict de-rating requirements while encountering transient spikes exceeding 40 V across the drain and source of MOSFET. Our 45 V devices offer 12.5% more safety margin than identical 40 V-rated solutions 40 V rated MOSFET could have insufficient headroom. Moving to 60 V device sacrifices performance as Rds x Qg FOM increases. Our 45 V parts offer 65% lower RDS-Qoss FOM than the 60 V devices.