onsemi NCP5106/NCP5304 high-voltage power MOSFET
The NCP5304 & NCP5106 are spome High Voltage Power gate Drivers providing two outputs for direct drive of 2 N−channel power MOSFETs or IGBTs arranged in a half−bridge configuration.
The NCP5304 & NCP5106 are spome High Voltage Power gate Drivers providing two outputs for direct drive of 2 N−channel power MOSFETs or IGBTs arranged in a half−bridge configuration.
They are using the bootstrap technique to ensure a proper drive of the high−side power switch. The drivers are working with 2 independent inputs.
Key features
- High Voltage Range: up to 600 V
- Negative Current Injection Characterized Over the Temperature Range
- High and Low Drive Outputs
- Up to VCC Swing on Input Pins
Additional features
- High-voltage range: up to 600 V
- dv/dt immunity 50 V/nsec
- Gate drive supply range from 10 V to 20 V
- High and low DRV outputs
- 3.3 V and 5 V input logic compatible
- Up to VCC swing on input pins
- Matched propagation delays between both channels
- Outputs in phase with the inputs
- Independent logic inputs to accommodate all topologies
- Under voltage lock out (UVLO) for both channels
Applications
- Half-bridge Power converters
- Full-bridge converters
- Any Complementary Drive Converters
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